creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 20 30 40 50 60 90 100 150 v v rms 14 21 28 35 42 63 70 105 v v dc 20 30 40 50 60 90 100 150 v i f(av) a dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1309009 version: g13 storage temperature range - 55 to +150 note 1: pulse test with pw=300 s, 1% duty cycle voltage rate of change (rated v r ) 10000 typical thermal resistance 4 operating junction temperature range - 55 to +125 - 55 to +150 maximum reverse current @ rated v r t j =25 t j =100 t j =125 i r 0.5 0.1 ma 15 10 - -5 a maximum instantaneous forward voltage (note 1) i f = 10 a v f 0.55 0.70 0.85 0.95 v maximum dc blocking voltage maximum average forward rectified current 10 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 200 sraf 1090 sraf 10100 sraf 10150 unit maximum repetitive peak reverse voltage maximum rms voltage mounting torque: 5 in-lbs maximum weight: 1.7 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter symbol sraf 1020 sraf 1030 sraf 1040 sraf 1050 sraf 1060 mechanical data ito-220ac case: ito-220ac polarity: as marked sraf1020 thru sraf10150 taiwan semiconductor isolated schottk y barrier rectifiers features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec
creat by art part no. part no. sraf1060 sraf1060 sraf1060 (ta=25 unless otherwise noted) document number: ds_d1309009 version: g13 sraf1060hc0 h c0 aec-q101 qualified ratings and characteristics curves sraf1060 c0 c0 sraf1060 c0g c0 g green compound note 1: "xx" defines voltage from 20v (sraf1020) to 150v (sraf10150) example preferred p/n aec-q101 qualified packing code green compound code description sraf10xx (note 1) prefix "h" c0 suffix "g" ito-220ac 50 / tube sraf1020 thru sraf10150 taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing 0 2 4 6 8 10 12 0 50 100 150 average forward current (a) case temperature ( o c) fig.1- forward current derating curve sraf1050-10150 sraf1020-1040 resistive or inductiveload with heatsink 0 50 100 150 200 250 300 1 10 100 peak forward surge current. (a) number of cycles at 60 hz fig. 2- maximum non-repetitive peak forward surge current 8.3ms single half sine wave per leg (jedec method) 0.001 0.01 0.1 1 10 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage.(%) fig. 4- typical reverse characteristics tj=25 tj=100 0.1 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 instantaneous forward current (a) instantaneous forward voltage. (v) fig. 3- typical forward characteristics sraf1050-1060 sraf1020-1040 SRAF1090-10100 sraf10150 pulse width-300 s 1% duty cycle
creat by art min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.10 0.098 0.122 c 2.30 2.90 0.091 0.114 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.00 1.60 0.000 0.063 i 0.95 1.45 0.037 0.057 j 0.50 0.90 0.020 0.035 k 2.40 3.20 0.094 0.126 l 14.80 15.50 0.583 0.610 m - 4.10 - 0.161 n - 1.80 - 0.071 o 12.60 13.80 0.496 0.543 p 4.95 5.20 0.195 0.205 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1309009 version: g13 marking diagram sraf1020 thru sraf10150 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) reverse voltage (v) fig. 5- typical junction capacitance sraf1050-60 sraf1020-40 f=1.0mhz vsig=50mvp-p SRAF1090-150 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t, pilse duration. (sec) fig. 6- typical transient thermal impedance
creat by art assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1309009 version: g13 sraf1020 thru sraf10150 taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
|
